TCMD1000(2004) 데이터 시트보기 (PDF) - Vishay Semiconductors
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TCMD1000
(Rev.:2004)
(Rev.:2004)
Vishay Semiconductors
TCMD1000 Datasheet PDF : 7 Pages
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Current Transfer Ratio
Parameter
IC/IF
Test condition
VCE = 2 V, IF = 1 mA
TCMD1000 / TCMD4000
Vishay Semiconductors
Part
Symbol Min
Typ.
Max
Unit
TCMD1000 CTR
600
800
%
TCMD4000 CTR
600
800
%
Switching Characteristics
Parameter
Rise time
Turn-off time
Test condition
VCE = 2 V, IC =10 mA,
RL = 100 Ω (see figure 1)
VCE = 2 V, IC =10 mA,
RL = 100 Ω (see figure 1)
0
IF
IF
RG = 50 Ω
tp = 0.01
T
tp = 50 ms
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50 Ω
+VCC
IC = 10 mA;
Channel I
Oscilloscope
Channel II RI = 1 MΩ
RL
CI = 20 pF
Figure 1. Test circuit, non-saturated operation
Symbol
Min
Typ.
Max
Unit
tr
300
µs
toff
250
µs
IF
0
IC
tp
100%
90%
96 11698
t
10%
0
tp
td
tr
ton (= td + tr)
tr
td
ton
pulse duration
delay time
rise time
turn-on time
ts
tf
toff
ts
tf
toff (= ts + tf)
t
storage time
fall time
turn-off time
Figure 2. Switching Times
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.3
IF=10mA
1.2
1.1
1.0
0.9
0.8
0
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20
40
60
80 100
Tamb – Ambient Temperature (°C )
Figure 3. Forward Voltage vs. Ambient Temperature
1000.0
100.0
10.0
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
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VF – Forward Voltage ( V )
Figure 4. Forward Current vs. Forward Voltage
Document Number 83513
Rev. 1.6, 26-Oct-04
www.vishay.com
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