NE34018 데이터 시트보기 (PDF) - NEC => Renesas Technology

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NE34018

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NEC => Renesas Technology 

DATA SHEET

HJ-FET

NE34018

L to S BAND LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

NE34018 is a n-channel HJ-FET housed in MOLD package.

FEATURES

x Low noise figure

NF = 0.6 dB TYP. at f = 2 GHz

x High associated gain

Ga = 16 dB TYP. at f = 2 GHz

x Gate width: Wg = 400 Pm

x 4 pins super mini mold

x Tape & reel packaging only available

ORDERING INFORMATION

PART NUMBER QUANTITY

NE34018-T1 3 Kpcs/Reel.

NE34018-T2 3 Kpcs/Reel.

PACKING STYLE

Embossed tape 8 mm wide. Pin 3

(Source), Pin 4 (Drain) face to

perforation side of the tape.

Embossed tape 8 mm wide. Pin 1

(Source), Pin 2 (Gate) face to

perforation side of the tape.

* Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part number for sample

order: NE34018)

ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)

Drain to Source Voltage

VDS

4.0

V

Gate to Source Voltage

VGS

ð3.0

V

Gate Current

ID

IDSS

mA

Total Power Dissipation

Ptot

150

mW

Channel Temperature

Tch

125

qC

Storage Temperature

Tstg

ð65 to +125

qC

PACKAGE DIMENSIONS

in millimeters

2.1 ±0.2

1.25 ±0.1

PIN CONNECTIONS

1. Source

2. Gate

3. Source

4. Drain

Document No. P11618EJ3V0DS00 (3rd edition)

Date Published September 1997 N

Printed in Japan

©

1996

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