NE34018 데이터 시트보기 (PDF) - NEC => Renesas Technology

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NE34018

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NEC => Renesas Technology 

NE34018

RECOMMENDED OPERATING CONDITION (TA = 25 qC)

CHARACTERISTIC

Drain to Source Voltage

Drain Current

Input Power

SYMBOL

VDS

ID

Pin

MIN.

TYP.

2

5

MAX.

3

30

+10

UNIT

V

mA

dBm

ELECTRICAL CHARACTERISTICS (TA = 25 qC)

CHARACTERISTIC

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cut off Voltage

Transconductance

Noise Figure

Associated Gain

Power Gain

Output Power at 1dB Gain

Compression Point

SYMBOL

IGSO

IDSS

VGS(off)

gm

NF

Ga

Gs

P(1dB)

MIN.

ð

30

ð0.2

30

14

TYP.

0.5

ð0.8

0.6

16

18

15

MAX.

10

120

ð2.0

ð

1.0

UNIT

PA

mA

V

mS

dB

dB

dB

dBm

TEST CONDITIONS

VGS = ð3 V

VDS = 2 V, VGS = 0 V

VDS = 2 V, ID = 100 PA

VDS = 2 V, ID = 5 mA

VDS = 2 V, ID = 5 mA, f = 2 GHz

VDS = 3 V. IDS = 30 mA (RF off)

f = 2 GHz

IDSS CLASSIFICATION

RANK

63

64

IDSS (mA)

30 to 65

60 to 120

MARKING

V63

V64

2

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