FDS6673BZ 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6673BZ Datasheet PDF : 6 Pages
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January 2006
FDS6673BZ
P-Channel PowerTrench® MOSFET
-30V, -14.5A, 7.8mΩ
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6.5kV typical (note 3)
High performance trench technology for extremely low
rDS(on)
High power and current handling capability
RoHS compliant
D
D
D
D
5
4
6
3
G
7
2
SO-8
SS
S
8
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
(Note1a)
Power Dissipation for Single Operation
(Note1a)
PD
TJ, TSTG
Operating and Storage Temperature
(Note1b)
(Note1c)
Ratings
-30
±25
-14.5
-75
2.5
1.2
1.0
-55 to 150
Units
V
V
A
A
W
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
Package Marking and Ordering Information
Device Marking
FDS6673BZ
Device
FDS6673BZ
Reel Size
13’’
50
°C/W
25
°C/W
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS6673BZ Rev. B
www.fairchildsemi.com
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