FDS6673BZ 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6673BZ Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
80
70
60
50
40
30
20
10
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = - 10V
VGS = - 5V
VGS = - 4.5V
VGS = - 4V
VGS = - 3.5V
VGS = - 3V
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
VGS = -3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -4V
VGS = -4.5V
VGS = -5V
VGS = -10V
20 30 40 50 60 70 80
-ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
1.5
1.4 ID = -14.5A
1.3 VGS = -10V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-80
-40
0
40
80 120 160
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance vs Junction
Temperature
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
60 VDS = -6V
TJ = 150oC
40
TJ = 25oC
20
TJ = -55oC
0
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
25
ID = -7A PULSE DURATION = 80µs
20
DUTY CYCLE = 0.5%MAX
15
TJ = 150oC
10
TJ = 25oC
5
0
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to Source
Voltage
100
VGS = 0V
10
TJ = 150oC
1
0.1
0.01
TJ = 25oC
TJ = -55oC
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
FDS6673BZ Rev. B
3
www.fairchildsemi.com
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