FDS6673BZ 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6673BZ Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
10
8
6
VDD = -10V
VDD = -15V
VDD = -20V
4
6000
1000
Ciss
Coss
Crss
2
0
0
20
40
60
80
100
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
f = 1MHz
VGS = 0V
100
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
1000
100
10
1
0.1
0.01
1E-3
1E-4
0
TJ = 150oC
TJ = 25oC
5 10 15 20 25 30 35
-VGS(V)
Figure 9. Ig vs VGS
40
10
TJ = 125oC
TJ = 25oC
1
10-2
10-1
100
101
102
103
tAV, TIME IN AVALANCHE(ms)
Figure 10. Unclamped Inductive Switching
Capability
16
12
VGS = -10V
8
VGS = -4.5V
4
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE(oC)
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
100
10us
10
100us
1ms
1
1ms
100ms
0.1 OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.01
0.1
1
SINGLE PULSE
TJ=MAX RATED
TA=25oC
10
1s
DC
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe Operating Area
FDS6673BZ Rev. B
4
www.fairchildsemi.com
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