3N80K5(2014) 데이터 시트보기 (PDF) - STMicroelectronics

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3N80K5
(Rev.:2014)

N-channel 800 V, 2.8 Ω typ., 2.5 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5

1

Electrical ratings

Electrical ratings

Symbol

Table 2. Absolute maximum ratings

Parameter

Value

Unit

DPAK TO-220FP TO-220 IPAK

VGS Gate- source voltage

Drain current (continuous) at

ID

TC = 25 °C

ID

(2)

IDM

Drain current (continuous) at

TC = 100 °C

Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

60

Max current during repetitive or

IAR single pulse avalanche (pulse width

limited by Tjmax)

Single pulse avalanche energy

EAS (starting TJ = 25 °C, ID=IAS, VDD= 50

V)

(3)

dv/dt Peak diode recovery voltage slope

(4)

dv/dt MOSFET dv/dt ruggedness

Tj

Operating junction temperature

Tstg Storage temperature

1. For TO-220FP limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 2.5 A, di/dt ≤ 100 A/μs, peak VDS ≤ V(BR)DSS

4. VDS ≤ 640 V

30

(1)

2.5

1.6

10

20

60

1

V

A

A

A

60 W

A

65

4.5

50

-55 to 150

mJ

V/ns

V/ns

°C

Symbol

Table 3. Thermal data

Parameter

Value

Unit

DPAK TO-220FP TO-220 IPAK

Rthj-case Thermal resistance junction-case

Rthj-pcb Thermal resistance junction-pcb

Rthj-amb Thermal resistance junction-amb

1. When mounted on FR-4 board of 1 inch², 2 oz Cu

2.08

(1)

50

6.25

62.5

2.08

62.5 100

°C/W

DocID025000 Rev 3

3/23

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