3N80K5 데이터 시트보기 (PDF) - STMicroelectronics

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3N80K5

N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK

STMicroelectronics 

STD3N80K5, STF3N80K5, STP3N80K5,

STU3N80K5

Electrical ratings

1

Electrical ratings

Symbol

Table 2: Absolute maximum ratings

Parameter

Value

DPAK TO-220FP TO-220

Unit

IPAK

VGS Gate-source voltage

Drain current (continuous) at

ID

TC = 25 °C

Drain current (continuous) at

ID

TC = 100 °C

ID(1) Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

60

VISO

dv/dt(2)

Insulation withstand voltage (RMS)

from all three leads to external

heat-sink (t = 1 s, TC = 25 °C)

Peak diode recovery voltage slope

dv/dt(3) MOSFET dv/dt ruggedness

Tj

Operating junction temperature range

Tstg Storage temperature range

±30

2.5

1.6

10

20

60

2.5

4.5

50

-55 to 150

V

A

A

A

60 W

kV

V/ns

°C

Notes:

(1)Pulse width limited by safe operating area.

(2)ISD ≤ 2.5 A, di/dt =100 A/μs; VDS peak < V(BR)DSS.

(3)VDS ≤ 640 V.

Symbol

Rthj-case

Rthj-amb

Rthj-pcb(1)

Table 3: Thermal data

Parameter

Value

DPAK TO-220FP TO-220 IPAK

Thermal resistance junction-case

2.08

6.25

2.08

Thermal resistance junction-ambient

62.5

62.5 100

Thermal resistance junction-pcb

50

Unit

°C/W

°C/W

°C/W

Notes:

(1)When mounted on FR-4 board of 1 inch², 2 oz Cu.

Table 4: Avalanche characteristics

Symbol

Parameter

IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Value Unit

1

A

65 mJ

DocID025000 Rev 4

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