3N80K5 데이터 시트보기 (PDF) - STMicroelectronics
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3N80K5
STMicroelectronics
3N80K5 Datasheet PDF : 24 Pages
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STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Table 7: Switching times
Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time VDD= 400 V, ID = 1.25 A, RG = 4.7 Ω
tr
Rise time
VGS = 10 V
td(off)
Turn-off delay time
(see Figure 18: "Test circuit for
resistive load switching times" and
tf
Fall time
Figure 23: "Switching time
waveform")
- 8.5
-
ns
- 10.5 -
ns
- 20.5 -
ns
-
25
-
ns
Symbol
Parameter
ISD
Source-drain
current
ISDM(1)
Source-drain
current (pulsed)
VSD(2) Forward on voltage
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
Table 8: Source-drain diode
Test conditions
ISD = 2.5 A, VGS = 0 V
ISD = 2.5 A, di/dt = 100 A/μs,
VDD = 60 V (see Figure 20: "Test
circuit for inductive load switching
and diode recovery times")
ISD = 2.5 A, di/dt = 100 A/μs,
VDD= 60 V, Tj= 150 °C ( see Figure
20: "Test circuit for inductive load
switching and diode recovery times")
Min. Typ. Max. Unit
-
2.5 A
-
10 A
-
1.5 V
- 265
ns
- 1.2
μC
- 9.2
A
- 430
ns
- 1.9
μC
- 8.8
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Symbol
V(BR)GSO
Parameter
Table 9: Gate-source Zener diode
Test conditions
Gate-source
breakdown voltage
IGS = ±1 mA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID025000 Rev 4
5/24
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