BCX19T116(2011) 데이터 시트보기 (PDF) - ROHM Semiconductor
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BCX19T116 Datasheet PDF : 3 Pages
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NPN small signal transistor
BCX19
Features
(1) High gain and low saturation voltage.
(2) Complements the BCX17.
Packaging specifications
Type
BCX19
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
Dimensions (Unit : mm)
BCX19
2.9
0.4
(3)
0.95
0.45
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : GU1
Absolute maximum ratings (Ta=25C)
Parameter
Collector-emitter voltage (VBE=0)
Collector-emitter voltage (open base)
Emitter-base voltage
Collector current
Collector current (peak value)
Symbol
VCES
VCEO
VEBO
IC
ICM
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
∗2 Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE
Limits
50
45
5
0.5
1
0.2
0.35
0.425
150
−65 to 150
Unit
V
V
V
A
A
W
W∗
W ∗2
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCES 50
Collector-emitter breakdown voltage BVCEO 45
Emitter-base breakdown voltage
BVEBO
5
Collector-base cutoff current
ICBO
−
Emitter-base cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
Base-emitter voltage
VBE(on)
−
100
DC current transfer ratio
hFE
70
40
Transition frequency
fT
−
Collector-base cutoff current
ICBO
−
Typ.
−
−
−
−
−
−
−
−
−
−
250
−
Max.
−
−
−
0.1
10
0.62
1.2
600
−
−
−
5
Unit
V
V
V
μA
μA
V
V
−
MHz
μA
Conditions
IC= 50μA
IC= 10mA
IE= 50μA
VCB= 20V
VEB= 5V
IC/IB= 500mA/ 50mA
VCE= 1V, IC= 500mA
VCE= 1V, IC= 100mA
VCE= 1V, IC= 300mA
VCE= 1V, IC= 500mA
VCE= 5V, IE= 20mA, f=100MHz
VCB= 20V, Ta=150°C
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1/2
2011.09 - Rev.B
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