BCX19T116 데이터 시트보기 (PDF) - ROHM Semiconductor
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BCX19T116 Datasheet PDF : 2 Pages
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Transistors
NPN small signal transistor
BCX19
BCX19
zFeatures
1) High gain and low saturation voltage.
2) Complements the BCX17.
zPackaging specifications
Type
BCX17
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
zDimensions (Unit : mm)
BCX19
2.9
0.4
(3)
0.95
0.45
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : GU1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-emitter voltage (VBE=0)
Collector-emitter voltage (open base)
Emitter-base voltage
Collector current
Collector current (peak value)
Symbol
VCES
VCEO
VEBO
IC
ICM
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
∗2 Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE
Limits
50
45
5
0.5
1
0.2
0.35
0.425
150
−65 to 150
Unit
V
V
V
A
A
W
W∗
W ∗2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCES 50
Collector-emitter breakdown voltage BVCEO 45
Emitter-base breakdown voltage
BVEBO
5
Collector-base cutoff current
ICBO
−
Emitter-base cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
Base-emitter voltage
VBE(on)
−
100
DC current transfer ratio
Transition frequency
Collector-base cutoff current
hFE
70
40
fT
−
ICBO
−
Typ.
−
−
−
−
−
−
−
−
−
−
250
−
Max.
−
−
−
0.1
10
0.62
1.2
600
−
−
−
5
Unit
V
V
V
µA
µA
V
V
−
MHz
µA
Conditions
IC= 50µA
IC= 10mA
IE= 50µA
VCB= 20V
VEB= 5V
IC/IB= 500mA/ 50mA
VCE= 1V, IC= 500mA
VCE= 1V, IC= 100mA
VCE= 1V, IC= 300mA
VCE= 1V, IC= 500mA
VCE= 5V, IE= 20mA, f=100MHz
VCB= 20V, Ta=150°C
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