GW30NC60WD 데이터 시트보기 (PDF) - STMicroelectronics
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GW30NC60WD Datasheet PDF : 14 Pages
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STGW30NC60WD
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VCES Collector-emitter voltage (VGE = 0)
IC (1) Collector current (continuous) at 25 °C
IC (1) Collector current (continuous) at 100 °C
ICP(2) Collector current (pulsed)
ICL (3) Turn-off latching current
VGE Gate-emitter voltage
IF
Diode RMS forward current at TC = 25 °C
IFSM Surge not repetitive forward current tp= 10 ms sinusoidal
PTOT Total dissipation at TC = 25 °C
Tstg Storage temperature
Tj
Operating junction temperature
1. Calculated according to the iterative formula:
600
60
30
150
150
± 20
30
120
200
– 55 to 150
IC(TC)
=
--------------------------------------T----j-(--m----a---x---)---–-----T---C----------------------------------------
Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))
2. Pulse width limited by max junction temperature
3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C
Table 3. Thermal resistance
Symbol
Parameter
Thermal resistance junction-case IGBT max.
Rthj-case
Thermal resistance junction-case diode max.
Rthj-amb Thermal resistance junction-ambient max.
Value
0.63
1.5
50
Unit
V
A
A
A
A
V
A
A
W
°C
Unit
°C/W
°C/W
°C/W
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