GW30NC60WD 데이터 시트보기 (PDF) - STMicroelectronics

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GW30NC60WD

30 A, 600 V ultra fast IGBT

STMicroelectronics 

Electrical characteristics

STGW30NC60WD

Table 8. Collector-emitter diode

Symbol

Parameter

Test conditions

VF

Forward on-voltage

IF = 20 A

IF = 20 A, TC = 125 °C

trr

Reverse recovery time

IF = 20 A,VR = 50 V,

Qrr

Reverse recovery charge di/dt = 100 A/µs

Irrm

Reverse recovery current (see Figure 20)

trr

Reverse recovery time

IF = 20 A,VR = 50 V,

Qrr

Irrm

Reverse recovery charge

Reverse recovery current

TC =125 °C, di/dt = 100

A/µs

(see Figure 20)

Min. Typ. Max. Unit

2.6

V

1.6

V

40

ns

50

nC

2.5

A

80

ns

180

nC

4.5

A

6/14

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