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SST25PF040B

4 Mbit 2.3-3.6V SPI Serial Flash

Microchip Technology 

SST25PF040B

4 Mbit 2.3-3.6V SPI Serial Flash

Features

• Single Voltage Read and Write Operations

- 2.3–3.6V

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• High Speed Clock Frequency

- 80 MHz (2.7-3.6V operation)

- 50 MHz (2.3-2.7V operation)

• Superior Reliability

- Endurance: 100,000 Cycles (typical)

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read Current: 10 mA (typical)

- Standby Current: 5 µA (typical)

• Flexible Erase Capability

- Uniform 4 KByte sectors

- Uniform 32 KByte overlay blocks

- Uniform 64 KByte overlay blocks

• Fast Erase and Byte-Program:

- Chip-Erase Time: 35 ms (typical)

- Sector-/Block-Erase Time: 18 ms (typical)

- Byte-Program Time: 7 µs (typical)

• Auto Address Increment (AAI) Programming

- Decrease total chip programming time over

Byte-Program operations

• End-of-Write Detection

- Software polling the BUSY bit in Status Register

- Busy Status readout on SO pin in AAI Mode

• Hold Pin (HOLD#)

- Suspends a serial sequence to the memory

without deselecting the device

• Write Protection (WP#)

- Enables/Disables the Lock-Down function of the

status register

• Software Write Protection

- Write protection through Block-Protection bits in

status register

• Temperature Range

- Commercial: 0°C to +70°C

• Packages Available

- 8-lead SOIC (150 mils)

- 8-lead SOIC (200 mils)

- 8-contact WSON (6mm x 5mm)

• All devices are RoHS compliant

Product Description

The 25 series Serial Flash family features a four-wire,

SPI-compatible interface that allows for a low pin-count

package which occupies less board space and ulti-

mately lowers total system costs. The SST25PF040B

devices are enhanced with improved operating fre-

quency and lower power consumption. SST25PF040B

SPI serial flash memories are manufactured with pro-

prietary, high-performance CMOS SuperFlash technol-

ogy. The split-gate cell design and thick-oxide tunneling

injector attain better reliability and manufacturability

compared with alternate approaches.

The SST25PF040B devices significantly improve per-

formance and reliability, while lowering power con-

sumption. The devices write (Program or Erase) with a

single power supply of 2.3-3.6V for SST25PF040B.

The total energy consumed is a function of the applied

voltage, current, and time of application. Since for any

given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time,

the total energy consumed during any Erase or Pro-

gram operation is less than alternative flash memory

technologies.

The SST25PF040B device is offered in an 8-lead SOIC

(150 mils), 8-lead SOIC (200 mils), and 8-contact

WSON (6mm x 5mm) packages. See Figure 2-1 for pin

assignments.

 2012 Microchip Technology Inc.

DS25134A-page 1

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