SIP21106DR-18-E3(2009) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIP21106DR-18-E3 Datasheet PDF : 19 Pages
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SPECIFICATIONS
Parameter
Input Voltage Range
Output Voltage Accuracy
Feedback Voltage
(SiP21108 Version only)
Line Regulation
Load Regulation
Ground Pin Currente
Shutdown Supply Current
Output Noise Voltagef (RMS)
Output Voltage Turn-On Time
Ripple Rejection
Output Current Limit
Auto Discharge Resistance
Dropout Voltaged
(2.2 V ≤ VOUT(nom) < 2.6 V)
Dropout Voltage
(VOUT(nom) ≥ 2.6 V)
EN Pin Input Voltage
EN Pin Input Current
Document Number: 74442
S09-1047-Rev. G, 08-Jun-09
SiP21106, SiP21107, SiP21108
Vishay Siliconix
Symbol
VIN
VOUT
VAdj
LNR
LDR
IGND
ICC(off)
eN
ton
PSRR
IO_LIM
RDIS
VDO
VDO
VENH
VENL
IEN
Test Conditions Unless Specified
VIN = VOUT(nom) + 1.0 V = VEN
IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF
- 40 °C < TA < 85 °C for full
IOUT = 1 mA
Temp.a Min.b
Full 2.2
Room - 1.0
Full - 2.5
SiP21106/7 (1.2 V) IOUT = 1 mA
Room - 1.5
Full - 4
Room 1.188
Full 1.170
VOUT ≥ 2.6 V,
IOUT: 1 mA to 150 mA
VOUT < 2.6 V,
IOUT: 1 mA to 150 mA
IOUT = 1 mA
Full - 0.2
Room
Room
Room
Full
IOUT = 150 mA
VEN = 0 V
SiP21106
VOUT(nom) = 2.8 V, BW = 10 Hz to 100 kHz,
1 mA < IOUT < 150 mA, CBP = 0.01 µF
SiP21107/8
VOUT(nom) = 2.8 V, BW = 10 Hz to 100 kHz,
1 mA < IOUT < 150 mA
EN to VOUT delay; IOUT = 1 mA
SiP21106, CBP = 0.01 µF
IOUT = 10 mA
f = 1 kHz
f = 10 kHz
f = 100 kHz
Room
Full
Full
Room
Room
Room
Room
Room
SiP21107/8
f = 1 kHz
SiP21106, CBP = 0 µF
IOUT = 10 mA
f = 10 kHz
f = 100 kHz
VOUT = 0 V
EN = 0 V, VOUT = 1 V
For VOUT < 2.2 V, EN = 0 V, VOUT = 1 V
IOUT = 50 mA
IOUT = 100 mA
Room
Room
Room
Room 170
Room
Room
Room
Full
Room
Full
IOUT = 150 mA
IOUT = 50 mA
Room
Full
Room
Full
IOUT = 100 mA
IOUT = 150 mA
Room
Full
Room
Full
High = Regulator On (Rising)
Full 1.2
Low = Regulator Off (Falling)
Full
Room
Typ.c
1.2
0.006
0.003
0.005
35
39
0.02
60
350
70
75
56
40
72
53
38
330
100
120
45
55
90
106
135
160
45
55
90
106
135
160
0.009
Max.b Unit
6
V
1.0
2.5
%
1.5
4
1.212
V
1.230
0.2 %/V
0.006
%/mA
0.009
75
85
µA
75
85
1 µA
µV
µs
dB
600 mA
Ω
250
300
mV
180
220
V
0.4
µA
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