IRF7105PBF 데이터 시트보기 (PDF) - International Rectifier

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IRF7105PBF

HEXFET® Power MOSFET

International Rectifier 

IRF7105PbF

N-Channel

VSD , Source-to-Drain Voltage ( V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

TA , Ambient Temperature ( °C )

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

+

-VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 11a. Gate Charge Test Circuit

4

VDS , Drain-to-Source Voltage ( V )

Fig 8. Maximum Safe Operating Area

VDS

VGS

RG

RD

D.U.T.

+

-

VDD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

10V

QGS

VG

QG

QGD

Charge

Fig 11b. Basic Gate Charge Waveform

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