V10N50BE 데이터 시트보기 (PDF) - Intersil
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V10N50BE Datasheet PDF : 6 Pages
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SEMICONDUCTOR
RFV10N50BE
August 1995
10A, 500V, Fast Switching N-Channel
Enhancement-Mode Power MOSFETs
Features
• 10A, 500V
• rDS(ON) = 0.480Ω
• Very Fast Turn-Off Characteristics
• Nanosecond Switching Speeds
• Electrostatic Discharge Protected
• UIS Rating Curve
• SOA is Power Dissipation Limited
• High Input Impedance
Package
JEDEC STYLE 5 LEAD TO-247
Description
The RFV10N50BE is an N-Channel fast switching MOSFET transis-
tor that is designed for switching regulators, inverters and motor driv-
Terminal Diagram
ers. The RFV10N50BE is a monolithic structure incorporating a high
voltage, high current MOSFET, a control MOSFET and ESD protec-
D
tion diodes. As indicated in the symbol to the right, the turn-on of the
main MOSFET is controlled by Gate 1 (G1). The control MOSFET,
controlled by Gate 2 (G2), is distributed throughout the structure. Gate
2 provides a very low impedance and inductive path to rapidly dis-
G1
charge the gate of the main MOSFET. Gate 2 affords very fast turn-off
(typically less than 25ns) when desired. A separate return connection,
G2
Source Kelvin (SK), is supplied for the gate drive circuit to avoid volt-
age induced transients from the output circuit during switching. The
RFV10N50BE can be operated directly from integrated circuits.
SK
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
S
RFV10N50BE
TO-247
V10N50BE
NOTE: When ordering use the entire part number.
Formerly developmental type TA9881.
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Control FET Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Control FET Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IAS
Control FET Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control FET Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
500
+14, -0.3
+14, -0.3
2
10
25
Refer to UIS Curve
1.5
50
156
1.25
21
0.17
-55 to +150
UNITS
V
V
V
KV
A
A
A
mJ
W
W/oC
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
1
File Number 3377.1
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