CGH60120D 데이터 시트보기 (PDF) - Unspecified

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CGH60120D

120 W, 6.0 GHz, GaN HEMT Die

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CGH60120D

120 W, 6.0 GHz, GaN HEMT Die

Cree’s CGH60120D is a gallium nitride

(GaN) High Electron Mobility Transistor

(HEMT). GaN has superior properties

compared to silicon or gallium arsenide, including higher

PN: CGH60120D

breakdown voltage, higher saturated electron drift velocity, and higher thermal

conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

FEATURES

APPLICATIONS

• 13 dB Typical Small Signal Gain at 4 GHz

• 12 dB Typical Small Signal Gain at 6 GHz

• 120 W Typical PSAT

• 28 V Operation

• High Breakdown Voltage

• High Temperature Operation

• Up to 6 GHz Operation

• High Efficiency

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable

for OFDM, W-CDMA, EDGE, CDMA

waveforms

Packaging Information

• Bare die are shipped in Gel-Pak® containers.

• Non-adhesive tacky membrane immobilizes die during

shipment.

Subject to change without notice.

www.cree.com/wireless

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