MG1275W-XN2MM 데이터 시트보기 (PDF) - Littelfuse, Inc
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MG1275W-XN2MM Datasheet PDF : 6 Pages
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Power Module
1200V 75A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
150
120
90
60
Tj =125°C
30
Tj =25°C
00
0.5 1.0 1.5 2.0 2.5
V ˄V˅
F
Figure 9: Switching Energy vs. Forward Current
for Diode Inverter
10.0
8.0
RG=4.7Ω
VCE=600V
Tj =125°C
6.0
4.0
2.0
00
30
60
90 120 150
IF (A)
Figure 11: NTC Characteristics
100000
VIFG=E25=A15V
VCE=600V
TVj =125°C
10000
TVj =25°C
R
1000
TVj =125°C
Figure 8: S witching Energy vs. Gate Resistort
for Diode Inverter
10.0
8.0
IF=75A
VCE=600V
Tj =125°C
6.0
4.0
2.0
00
10
20
30
40
50
RG˄Ω˅
Figure 10: Transient Thermal Impedance of
Diode and IGBT Inverter
1
Diode
IGBT
0.1
0.01
0.001 0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
100
0
20 40 60 80 100 120 140 160
TC˄°C˅
MG1275W-XN2MM
2429
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
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