VND5025AK-E(2007) 데이터 시트보기 (PDF) - STMicroelectronics

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VND5025AK-E
(Rev.:2007)

Double channel high side driver with analog current sense for automotive applications

STMicroelectronics 

VND5025AK-E

Table 4. Absolute maximum ratings (continued)

Symbol

Parameter

VESD

Electrostatic Discharge

(Human Body Model: R = 1.5kΩ; C = 100pF)

- Input

- Current sense

- CS_DIS

- Output

- VCC

VESD Charge device model (CDM-AEC-Q100-011)

Tj

Junction operating temperature

Tstg Storage temperature

1. See Section 3.4 for details.

Electrical specification

Value

Unit

4000

V

2000

V

4000

V

5000

V

5000

V

750

V

-40 to 150

°C

-55 to 150

2.2

Thermal data

Table 5.

Symbol

Thermal data

Parameter

Max Value Unit

Rthj-case Thermal resistance junction-case (MAX) (with one channel ON)

Rthj-amb

Thermal resistance junction-ambient (MAX)

1.35

See Figure 29

°C/W

2.3

Electrical characteristics

8V<VCC<36V; -40°C<Tj<150°C, unless otherwise specified.

Table 6. Power section

Symbol

Parameter

Test conditions

VCC

Operating supply

voltage

VUSD Undervoltage shutdown

VUSDhyst

Undervoltage shut-

down hysteresis

RON On state resistance(1)

Vclamp Clamp voltage

IS Supply current

IOUT = 3A; Tj = 25°C

IOUT = 3A; Tj = 150°C

IOUT = 3A; VCC = 5V; Tj = 25°C

IS = 20 mA

Off State; VCC = 13V; Tj = 25°C;

VIN = VOUT = VSENSE = VCSD = 0V

On State; VCC = 13V; VIN = 5V;

IOUT = 0A

Min Typ Max Unit

4.5 13 36

3.5 4.5 V

0.5

25

50 mΩ

35

41 46 52 V

2(2) 5(2) µA

3 6 mA

9/33

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