VND5T050AKTR-E 데이터 시트보기 (PDF) - STMicroelectronics

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VND5T050AKTR-E

Double channel high-side driver with analog current sense for 24 V automotive applications

STMicroelectronics 

Electrical specifications

Table 3. Absolute maximum ratings (continued)

Symbol

Parameter

Lsmax

VESD

VESD

Maximum strain inductance in short circuit condition

RL = 300 mΩ, Vbatt = 32 V, Tjstart = 150°C, lout = ILMHmax

Electrostatic discharge

(Human Body Model: R = 1.5 KΩ; C = 100 pF)

– IN1,2

– CS1,2

– FR_Stby

– OUT1,2

– VCC

Charge device model (CDM-AEC-Q100-011)

Tj Junction operating temperature

Tstg Storage temperature

VND5T050AK-E

Value

Unit

40

µH

4000

V

2000

V

4000

V

5000

V

5000

V

750

V

-40 to 150

°C

-55 to 150

°C

2.2

Thermal data

Table 4.

Symbol

Thermal data

Parameter

Rthj-case Thermal resistance junction-case (max.) (with one channel ON)

Rthj-amb Thermal resistance junction-ambient (max.)

Value

2

See

Figure 27

Unit

°C/W

°C/W

8/32

Doc ID 022694 Rev. 3

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