LH531000BD 데이터 시트보기 (PDF) - Sharp Electronics
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LH531000BD Datasheet PDF : 6 Pages
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CMOS 1M MROM
LH531000B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply voltage
Input voltage
Output voltage
Operating temperature
Storage temperature
SYMBOL
VCC
VIN
VOUT
Topr
Tstg
RATING
–0.3 to +7.0
–0.3 to VCC +0.3
–0.3 to VCC +0.3
0 to +70
–65 to +150
UNIT
V
V
V
°C
°C
RECOMMENDED OPERATING CONDITIONS (TA = 0 to +70°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
VCC
4.5
5.0
5.5
V
DC CHARACTERISTICS (VCC = 5 V ±10%, TA = 0 to +70°C)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
Input ‘Low’ voltage
VIL
Input ‘High’ voltage
VIH
Output ‘Low’ voltage
VOL
IOL = 2.0 mA
Output ‘High’ voltage
VOH
IOH = –400 µA
Input leakage current
| ILI | VIN = 0 V to VCC
Output leakage current | ILO | VOUT = 0 V to VCC
ICC1
tRC = 150 ns
Operating current
ICC2
ICC3
tRC = 1 µs
tRC = 150 ns
ICC4
tRC = 1 µs
Standby current
ISB1
CE = VIH
ISB2
CE = VCC – 0.2 V
Input capacitance
Output capacitance
CIN
COUT
f = 1 MHz
TA = 25°C
NOTES:
1. CE/OE = VIH, OE = VIL
2. VIN = VIH or VIL, CE = VIL, outputs open
3. VIN = (VCC - 0.2 V) or 0.2 V. CE = 0.2 V, outputs open
–0.3
2.2
2.4
MAX.
0.8
VCC + 0.3
0.4
10
10
35
25
30
20
2
100
10
10
AC CHARACTERISTICS (VCC = 5 V ±10%, TA = 0 to +70°C)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT NOTE
Read cycle time
tRC
150
ns
Address access time
tAA
150
ns
Chip enable access time
tACE
150
ns
Output enable time
tOE
70
ns
Output hold time
tOH
5
ns
CE to output in High-Z
OE to output in High-Z
tCHZ
tOHZ
70
ns
1
70
ns
NOTE:
1. This is the time required for the output to become high-impedance.
UNIT
V
V
V
V
µA
µA
mA
NOTE
1
2
mA
3
mA
µA
pF
pF
3
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