LH531000BN-S 데이터 시트보기 (PDF) - Sharp Electronics
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LH531000BN-S Datasheet PDF : 5 Pages
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LH531000B-S
FEATURES
• 131,072 words × 8 bit organization
• Access time: 500 ns (MAX.)
• Power consumption:
Operating: 64.8 mW (MAX.)
Standby: 108 µW (MAX.)
• Mask-programmable control pin:
Pin 20 = CE/OE/OE
• Static operation
• Three-state outputs
• Low power supply: 2.6 V to 3.6 V
• Package: 28-pin, 450-mil SOP
CMOS 1M (128K × 8) 3 V-Drive MROM
DESCRIPTION
The LH531000B-S is a mask-programmable ROM
organized as 131,072 × 8 bits. It is fabricated using
silicon-gate CMOS process technology.
PIN CONNECTIONS
28-PIN SOP
TOP VIEW
A15 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
D0 11
D1 12
D2 13
GND 14
28 VCC
27 A14
26 A13
25 A8
24 A9
23 A11
22 A16
21 A10
20 CE/OE/OE
19 D7
18 D6
17 D5
16 D4
15 D3
531000BS-1
Figure 1. Pin Connections for DIP Package
1
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