LH532000BN 데이터 시트보기 (PDF) - Sharp Electronics
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LH532000BN Datasheet PDF : 7 Pages
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CMOS 2M MROM
LH532000B
AC CHARACTERISTICS (VCC = 5 V ±10%, TA = 0 to +70°C)
PARAMETER
SYMBOL
120 ns
MIN.
MAX.
150 ns
MIN.
MAX.
Read cycle time
tRC
120
150
Address access time
tAA
120
150
Chip enable access time
tACE
120
150
Output enable delay time
tOE
55
70
Output hold time
tOH
5
10
CE to output in High-Z
tCHZ
55
70
OE to output in High-Z
tOHZ
55
70
NOTE:
1. This is the time required for the output to become high-impedance.
AC TEST CONDITIONS
PARAMETER
Input voltage amplitude
Input rise/fall time
Input reference level
Output reference level
Output load condition
RATING
0.6 V to 2.4 V
10 ns
1.5 V
0.8 V and 2.2 V
1TTL +100 pF
UNIT
ns
ns
ns
ns
ns
ns
ns
NOTE
1
CAUTION
To stabilize the power supply, it is recommended that a high-frequency bypass capacitor be connected between
the VCC pin and the GND pin.
(NOTE 2)
A-1 - A16
(A0 - A16)
tRC
tAA(NOTE 1)
CE
tACE
tCHZ
OE/OE1
OE/OE1
(NOTE 2)
D0 - D7
(D0 - D15)
tOE (NOTE 1)
NOTES:
1. Data becomes valid after tAA, tACE, and tOE from address
input, chip enable or output enable, respectively have been met.
2. Applied to byte mode. Signals in parentheses apply to word mode.
tOHZ
DATA VALID
tOH
Figure 4. Timing Diagram
532000B-3
5
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