TC7MBL3245CFT(EL) 데이터 시트보기 (PDF) - Toshiba
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TC7MBL3245CFT(EL) Datasheet PDF : 9 Pages
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TC7MBL3245CFT
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics
Symbol Note
Test Condition
VCC (V)
Min
Typ.
Max Unit
High-level input voltage
VIH
(OE)
1.65 to 3.6 0.7 × VCC
V
Low-level input voltage
VIL
(OE)
1.65 to 3.6
0.3 × VCC V
Input leakage current
IIN
VIN = 0 to 3.6 V
1.65 to 3.6
±1.0 µA
(OE)
Power-OFF leakage current
IOFF
OE, A, B = 0 to 3.6 V
0
10
µA
Switch OFF-state leakage
ISZ
current
A, B = 0 V to VCC,
1.65 to 3.6
OE = VCC
±1.0 µA
ON-resistance
RON (Note 1), VIS = 0 V,
(Note 2) IIS = 30 mA
3.0
6.5
11
Ω
VIS = 3.0 V,
IIS = 30 mA
3.0
11
16
VIS = 2.4 V,
IIS = 15 mA
3.0
12
18
VIS = 0 V,
IIS = 24 mA
2.3
7
11
VIS = 2.3 V,
IIS = 24 mA
2.3
13
20
VIS = 2.0 V,
IIS = 15 mA
2.3
15
21
VIS = 0 V,
IIS = 4 mA
1.65
8
14
VIS = 1.65 V,
IIS = 4 mA
1.65
17
26
Quiescent supply current
ICC
VIN = VCC or GND,
3.6
IOUT = 0 A
10
µA
Note 1: All typical values are at Ta = 25 .
Note 2: Measured by the voltage drop between A and B pins at the indicated current through the switch. On-resistance
is determined by the lower of the voltages on the two (A or B) pins.
11.2. AC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics
Output enable time
Output disable time
Symbol
Test Condition
tPZL,tPZH See Fig. 11.2.1, 11.2.2,
Table 11.2.1
tPLZ,tPHZ See Fig. 11.2.1, 11.2.2,
Table 11.2.1
VCC (V)
Min
3.3 ± 0.3
2.5 ± 0.2
1.8 ± 0.15
3.3 ± 0.3
2.5 ± 0.2
1.8 ± 0.15
Max
Unit
6
ns
7
11
6
ns
7
11
11.3. Capacitive Characteristics (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Test Condition
Input capacitance
CIN
Switch terminal OFF-capacitance
CI/O
Switch terminal ON-capacitance
CI/O
Note: Parameter guaranteed by design.
VIN = 0 V
OE = VCC, VIS = 0 V
OE = GND, VIS = 0 V
VCC (V)
Typ.
Unit
3.0
4
pF
3.0
3.5
pF
3.0
7.5
pF
©2017
Toshiba Electronic Devices & Storage Corporation
4
2017-10-03
Rev.3.0
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