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BZW04-10-E3/51 데이터 시트보기 (PDF) - Vishay Semiconductors

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BZW04-10-E3/51
VISHAYSEMICONDUCTOR
Vishay Semiconductors VISHAYSEMICONDUCTOR
BZW04-10-E3/51 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
www.vishay.com
BZW04-5V8 thru BZW04-376
Vishay General Semiconductor
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BZW0410-E3/54
0.350
54
BZW0410HE3/54 (1)
0.350
54
BASE QUANTITY
550
550
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1000
Measured at
Zero Bias
1
0.1
0.1
1
10
100
1000 10 000
td - Pulse Width (µs)
Fig. 1 - Peak Pulse Power Rating Curve
100
75
100
Measured at Stand-Off
Voltage VWM
10
1
10
100
1000
VBR - Breakdown Voltage (V)
Fig. 4 - Typical Junction Capacitance
100
60 Hz
Resistive or
Inductive Load
75
50
50
L = 0.375" (9.5 mm)
Lead Lengths
25
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
150
tr = 10 µs
Peak Value
IPPM
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
Decays to 50 % of IPPM
Half Value - IPP
IPPM
2
0
0 25 50 75 100 125 150 175 200
TL - Lead Temperature (°C)
Fig. 5 - Power Derating Curve
100
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
10
1
10
100
Number of Cycles at 60 Hz
Fig. 6 - Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
Revision: 16-Jan-18
4
Document Number: 88316
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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