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STK554U362C-E Datasheet PDF : 15 Pages
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STK554U362C-E
Intelligent Power Module (IPM)
600 V, 10 A
Overview
This “Inverter IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single small SIP
module. Output stage uses IGBT / FRD technology and implements Under
Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault
Detection output flag. Internal Boost diodes are provided for high side gate
boost drive.
Function
Single control power supply due to Internal bootstrap circuit for high
side pre-driver circuit
All control inputs and status outputs are at low voltage levels directly
compatible with microcontrollers.
A single power supply drive is enabled through the use of bootstrap
circuits for upper power supplies
Built-in dead-time for shoot-thru protection
Having open emitter output for low side IGBTs ; individual shunt
resistor per phase for OCP
Externally accessible embedded thermistor for substrate temperature
measurement
Shutdown function ‘ITRIP’ to disable all operations of the 6 phase
output stage by external input
www.onsemi.com
ORDERING INFORMATION
See detailed ordering and shipping information
on page 15 of this data sheet.
Certification
UL1557 (File number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Remarks
Ratings
Supply voltage
VCC
V+ to U-, V-, W-, surge < 500 V
*1
450
Collector-emitter voltage
VCE
V+ to U, V, W or U, V, W, to U-, V-, W-
600
Output current
Io
V+,U-,V-,W-,U,V,W terminal current
V+,U-,V-,W-,U,V,W terminal current, Tc = 100C
±10
±7
Output peak current
Iop
V+,U-,V-,W-,U,V,W terminal current, P.W. = 1 ms
±20
Pre-driver voltage
Input signal voltage
FLTEN terminal voltage
VD1, 2, 3, 4 VB1 to U, VB2 to V, VB3 to W, VDD to VSS
*2
VIN
HIN1, 2, 3, LIN1, 2, 3
VFLTEN
FLTEN terminal
20
0.3 to VDD
0.3 to VDD
Maximum power dissipation
Pd
IGBT per 1 channel
30
Junction temperature
Tj
IGBT, FRD, Pre-Driver IC
150
Storage temperature
Tstg
40 to +125
Operating case temperature
Tc
IPM case
40 to +100
Tightening torque
A screw part
*3
0.9
Withstand voltage
Vis
50 Hz sine wave AC 1 minute
*4
2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between + and U- (V-, W-) terminal.
*2 : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS terminal voltage.
*3 : Flatness of the heat-sink should be less than 50 m to +100 m.
*4 : Test conditions : AC 2500 V, 1 second
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
August 2017 - Rev. 3
Publication Order Number :
STK554U362C-E/D
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