SI8424CDB 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI8424CDB Datasheet PDF : 11 Pages
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www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
Si8424CDB
Vishay Siliconix
TJ = 150 °C
10
TJ = 25 °C
1
0.04
0.03
0.02
0.01
ID = 2 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.7
80
0.6
60
0.5
0.4
40
ID = 250 μA
0.3
20
0.2
0.1
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01 0.1
1
10
Time (s)
100
600
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10
1 ms
1
0.1
TA = 25 °C
10 ms
100 ms
1s
10 s
DC
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-1692-Rev. C, 20-Jul-15
4
Document Number: 63894
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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