NCV8702(2013) 데이터 시트보기 (PDF) - ON Semiconductor

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NCV8702
(Rev.:2013)

200 mA, Ultra-Low Quiescent Current, Ultra-Low Noise, LDO Linear Voltage Regulator

ON Semiconductor 

NCV8702

Table 3. THERMAL CHARACTERISTICS (Note 3)

Rating

Thermal Characteristics, TSOP−5,

Thermal Resistance, Junction−to−Air

Thermal Characterization Parameter, Junction−to−Lead (Pin 2)

Thermal Characteristics, XDFN6 1.5 x 1.5 mm

Thermal Resistance, Junction−to−Air

Thermal Characterization Parameter, Junction−to−Board

3. Single component mounted on 1 oz, FR4 PCB with 645 mm2 Cu area.

Symbol

qJA

yJA

qJA

yJB

Value

224

115

149

81

Unit

C/W

C/W

Table 4. ELECTRICAL CHARACTERISTICS

(−40C  TJ  125C; VIN = VOUT(NOM) + 0.3 V or 2.0 V, whichever is greater; VEN = 0.9 V, IOUT = 10 mA, CIN = COUT = 1 mF.

Typical values are at TJ = +25C. Min/Max values are specified for TJ = −40C and TJ = 125C respectively.) (Note 4)

Parameter

Test Conditions

Symbol Min Typ Max Unit

Operating Input Voltage

Undervoltage lock−out

Output Voltage Accuracy

Line Regulation

Load Regulation

Dropout voltage (Note 5)

Output Current Limit

Quiescent current

Ground current

Shutdown current (Note 6)

EN Pin Threshold Voltage

High Threshold

Low Threshold

EN Pin Input Current

Turn−On Time (Note 7)

Output Voltage Overshoot on

Start−up (Note 8)

VIN rising

VOUT + 0.3 V  VIN  5.5 V, IOUT = 0 − 200 mA

VOUT + 0.3 V  VIN  4.5 V, IOUT = 10 mA

VOUT + 0.3 V  VIN  5.5 V, IOUT = 10 mA

IOUT = 0 mA to 200 mA

IOUT = 200 mA, VOUT(nom) = 2.5 V

VOUT = 90% VOUT(nom)

IOUT = 0 mA

IOUT = 2 mA

IOUT = 200 mA

VEN  0.4 V

VEN  0.4 V, VIN = 4.5 V

VEN Voltage increasing

VEN Voltage decreasing

VEN = VIN = 5.5 V

COUT = 1.0 mF, IOUT = 1 mA

VEN = 0 V to 0.9 V, 0  IOUT  200 mA

VIN

2.0

5.5

V

UVLO

1.2

1.6

1.9

V

VOUT

−2

+2

%

RegLINE

290

mV/V

RegLINE

440

mV/V

RegLOAD

13

mV/mA

VDO

140 200 mV

ICL

220 385 550 mA

IQ

10

16

mA

IGND

60

mA

IGND

160

mA

IDIS

0.005

mA

IDIS

0.01

1

mA

VEN_HI

0.9

VEN_LO

V

0.4

IEN

110

500

nA

tON

300

ms

DVOUT

2

%

Load Transient

IOUT = 1 mA to 200 mA or

DVOUT

−30/+30

mV

IOUT = 200 mA to 1 mA in 10 ms, COUT = 1 mF

Power Supply Rejection Ratio

VIN = 3 V, VOUT = 2.5 V

f = 100 Hz

PSRR

70

dB

IOUT = 150 mA

f = 1 kHz

68

f = 10 kHz

53

Output Noise Voltage

VOUT = 2.5 V, VIN = 3 V, IOUT = 200 mA

VN

f = 100 Hz to 100 kHz

11

mVrms

Active Discharge Resistance

VEN < 0.4 V

RDIS

1

kW

Thermal Shutdown Temperature Temperature increasing from TJ = +25C

TSD

160

C

Thermal Shutdown Hysteresis

Temperature falling from TSD

TSDH

−

20

−

C

4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA

= 25_C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.3 V.

6. Shutdown Current is the current flowing into the IN pin when the device is in the disable state.

7. Turn−On time is measured from the assertion of EN pin to the point when the output voltage reaches 0.98 VOUT(NOM)

8. Guaranteed by design.

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