SD4843 데이터 시트보기 (PDF) - Silan Microelectronics
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SD4843 Datasheet PDF : 11 Pages
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SD4840/4841/4842/4843/4844
Characteristics
Symbol
SD4840P67K65
SD4841P67K65
Continuous Drain Current
SD4842P67K65
ID
(Tamb=25°C)
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
Signal Pulse Avalanche
SD4842P67K65
EAS
Energy(note 2)
SD4843P67K65
SD4844P67K65
Power Supply Voltage
VCC,MAX
Analog Input Voltage
VFB
Total Power Dissipation
PD
Darting
Operating Junction Temperature
TJ
Operating Temperature
Tamb
Storage Temperature
TSTG
Note: 1. Pulse width is limited by maximum junction temperature.
2. L=51mH, starting Tj=25°C
Rating
1
1.5
2
3
4
15
30
68
140
200
21
-0.3~ VSD
1.5
0.017
+160
-25~ +85
-55~+150
Unit
A
mJ
V
V
W
W/°C
°C
°C
°C
ELECTRICAL CHARACTERISTICS (sense MOSFET part, unless otherwise specified, Tamb=25°c)
Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-
Source On
Resistance
Input
Capacitance
Output
Capacitance
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
Symbol
Test conditions
BVDSS VGS=0V, ID=50μA
VDS=Max. VGS=0V
IDSS VDS=0.8Max. VGS=0V
Tamb=125°C
RDS(ON) VGS=10V, ID=0.5A
Ciss VGS=0V, VDS=25V, f=1MHz
Coss VGS=0V, VDS=25V, f=1MHz
Min.
650
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Typ.
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14.0
8.0
5.0
4.0
3.0
210
250
550
640
840
18
25
38
40
44
Max.
--
50
200
16.8
9.6
6.0
4.8
3.6
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Unit
V
μA
μA
Ω
pF
pF
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: //www.silan.com.cn
REV:1.2 2008.12.17
Page 3 of 11
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