NTMFS4833NT3G 데이터 시트보기 (PDF) - ON Semiconductor

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NTMFS4833NT3G

MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 191 A

ON Semiconductor 

NTMFS4833N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Junction−to−Case (Drain)

RqJC

1.1

Junction−to−Ambient – Steady State (Note 3)

RqJA

45.6

Junction−to−Ambient – t < 10s (Note 3)

RqJA

17.1

Junction−to−Ambient – Steady State (Note 4)

RqJA

117.4

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm2 [1 oz])

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 5)

V(BR)DSS

V(BR)DSS/

TJ

IDSS

IGSS

VGS = 0 V, ID = 250 mA

30

VGS = 0 V,

VDS = 24 V

TJ = 25 °C

TJ = 125°C

VDS = 0 V, VGS = ±20 V

Gate Threshold Voltage

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance

VGS(TH)

VGS(TH)/TJ

RDS(on)

Forward Transconductance

gFS

CHARGES, CAPACITANCES & GATE RESISTANCE

VGS = VDS, ID = 250 mA

1.5

VGS = 10 V to

11.5 V

ID = 30 A

ID = 15 A

VGS = 4.5 V

ID = 30 A

ID = 15 A

VDS = 15 V, ID = 15 A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Total Gate Charge

SWITCHING CHARACTERISTICS (Note 6)

CISS

COSS

CRSS

QG(TOT)

QG(TH)

QGS

QGD

QG(TOT)

VGS = 0 V, f = 1 MHz, VDS = 12 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 11.5 V, VDS = 15 V; ID = 30 A

Turn−On Delay Time

td(ON)

Rise Time

Turn−Off Delay Time

tr

td(OFF)

VGS = 4.5 V, VDS = 15 V, ID = 15 A,

RG = 3.0 W

Fall Time

tf

Turn−On Delay Time

td(ON)

Rise Time

Turn−Off Delay Time

tr

td(OFF)

VGS = 11.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

Fall Time

tf

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

Unit

°C/W

Typ Max Unit

V

17

mV/°C

1

mA

10

±100

nA

2.5

V

7.12

mV/°C

1.3

2.0

1.3

mW

2.3

3.0

2.3

30

S

5600

1200

pF

650

39

58

6.0

nC

16

17

88

nC

25

34

ns

35

17

14

19

ns

50

10

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