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L6615 데이터 시트보기 (PDF) - STMicroelectronics

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L6615
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L6615 Datasheet PDF : 20 Pages
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L6615
ELECTRICAL CHARACTERISTCS
(Tj = -40 to 85°C, Vcc=12V, VADJ = 12V, CCOMP = 5nF to GND, RCGA = 16k, unless otherwise specified;
VSENSE = IL * RSENSE, RG1 = RG2 = 200)
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
Vcc
Vcc Operating range
Icc Quiescent current
VCC, ON Turn-on voltage
VCC,OFF Turn-off voltage
VH Hysteresis
VSH= 1V, VSENSE= 0V
VSH= 0.2V, VSENSE= 0V
Vz
CURRENT SENSE AMPLIFIER
ICC = 20mA
VOS Input offset voltage
0.1V VSH 10.0V
VCGA Out high voltage
VSENSE = 0.25V
ICGAS
IB(CS-)
Short circuit current
Input bias current (high side
sensing)
VCGA= 0V, VSENSE= 0.45V
VSENSE = 0V, VCS+=+12V
IB(CS+) Input bias current (low side
sensing)
VSENSE = 0V, VCS+=0V
CMR Common mode dynamics range VCS-, VCS+
VTHCS+ Switchover threshold low side to VCS+
high side sensing
SWH Switchover hysteresis
SHARE DRIVE AMPLIFIER
HVSH
LVSH
SH high output voltage
SH low output voltage
VSENSE= 250mV, ISH= -1mA
VCGA= 0mV, RSH= 200
α(+) High side sensing mirror accuracy
(*)
α(-) Low side sensing mirror accuracy
(*)
VSH, load Load regulation
ISC Short circuit current
-1.0mA ISDA(OUT) -4mA
VSH= 0V, VSENSE= 25mV
SR Slew rate
SHARE SENSE AMPLIFIER
VSENSE= -10mV to 90mV step,
RSH= 200to GND
VSENSE= 90mV to –10mV step,
RSH= 200to GND
Ri Input impedance
ERROR AMPLIFIER
Gm Transconductance
Vos Input offset voltage
VCGA=1V
2.7
5
2.45 2.60
2.35 2.5
100
24
26
-1.5 0.0
Vcc-2.2
-1.5 -2.0
0
1.6
0.16
Vcc-2.2
±1
±1
-20 -13.5
0.8
1.5
2
3
22.4
32
3
4
30
50
22
6
2.75
2.65
1.5
1.0
-1.0
VCC
45
±5
±5
20
-8
2.2
4
41.6
5
70
V
mA
V
V
mV
V
mV
V
mA
µA
µA
V
V
V
V
mV
%
%
mV
mA
V/µs
V/µs
k
mS
mV
4/20

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