LC05111CMT(2015) 데이터 시트보기 (PDF) - ON Semiconductor

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LC05111CMT
(Rev.:2015)

1-Cell Lithium-Ion Battery Protection IC with integrated Power MOS FET

ON Semiconductor 

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LC05111CMT

By continuing to be charged, if cell voltage will get higher than over-discharge detection voltage (Vuvr) over

the delay time of over-discharging (Tuvr), internal power MOS FETs as DCHG_SW is turned on and normal

mode will be resumed.

In over-discharge detection mode, charging over-current detection does not operate.

By continuing to be charged, charging over-current detection starts to operate after cell voltage goes up

more than over-discharge release voltage (Vuvr).

(4) Discharging over-current detection mode 1

 Internal power MOS FET as DCHG_SW will be turned off and discharging current will be shut off if CS pin

voltage will get equal to or higher than discharging over-current detection current (Ioc) over the delay time

of discharging over-current (Toc1).

This is the discharging over-current detection mode 1.

In discharging over-current detection mode 1, CS pin will be pulled down to Vss with internal resistor Rcsd.

 The recovery from discharging over-current detection mode will be made after the following two conditions

are satisfied.

a. Load is removed from IC.

b. CS pin voltage will get equal to or lower than discharging over-current release current (Iocr) over the

delay time of discharging over-current release (Tocr1) due to CS pin pulled down through Rcsd.

Consequently, internal power MOS FET as DCHG_SW will be turned on, and normal mode will be

resumed.

(5) Discharging over-current detection mode 2 (short circuit detection)

 Internal power MOS FET as DCHG_SW will be turned off and discharging current will be shut off if CS pin

voltage will get equal to or higher than discharging over-current detection current2 (Ioc2) over the delay

time of discharging over-current 2 (Toc2).

This is the short circuit detection mode.

 In short circuit detection mode, CS pin will be pulled down to Vss by internal resistor Rcsd.

The recovery from short circuit detection mode will be made after the following two conditions are satisfied.

a. Load is removed from IC.

b. CS pin voltage will get equal to or lower than discharging over-current release current (Iocr) over the

delay time of discharging over-current release (Tocr1) due to CS pin pulled down through Rcsd.

Consequently, internal power MOS FET as DCHG_SW will be turned on, and normal mode will be

resumed.

(6) Charging over-current detection mode

 Internal power MOS FET as CHG_SW will be turned off and charging current will be shut off if CS pin

voltage will get equal to or lower than charging over-current detection current (Ioch) over the delay time of

charging over-current (Toch).

This is the charging over-current detection mode.

 The recovery from charging over-current detection mode will be made after the following two conditions is

satisfied.

a. Charger is removed from IC and CS pin will get higher by load connected.

b. CS pin voltage will get equal to or higher than charging over-current release current (Iochr) over the

delay time of charging over-current release (Tocrh).

Consequently, internal power MOS FET as CHG_SW will be turned on, and normal mode will be resumed.

*Internal current flows out through CS and S2 terminals.

After charger is removed, it flows through parasitic diode of CHG_SW FET.

Therefore, CS pin voltage will go up more than charging over-current release current (Iochr).

So CS pin voltage is not an indispensable condition for recovery from charging over-current detection.

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