LC05111CMT(2015) 데이터 시트보기 (PDF) - ON Semiconductor
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LC05111CMT
(Rev.:2015)
(Rev.:2015)
ON Semiconductor
LC05111CMT Datasheet PDF : 17 Pages
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LC05111CMT
Continued from preceding page.
Parameter
Resistance
ON resistance 1 of
integrated power MOS FET
ON resistance 2 of
integrated power MOS FET
ON resistance 3 of
integrated power MOS FET
ON resistance 4 of
integrated power MOS FET
Symbol
Ron1
Ron2
Ron3
Ron4
Internal resistance (VCC-CS)
Rcsu
Internal resistance (VSS-CS)
Rcsd
Detection and Release delay time
Over-charge detection delay
time
Tov
Over-charge release delay time Tovr
Over-discharge detection delay
time
Over-discharge release delay
time
Tuv
Tuvr
Conditions
VCC=3.1V
I=±2.0A
VCC=3.7V
I=±2.0A
VCC=4.0V
I=±2.0A
VCC=4.5V
I=±2.0A
VCC=Vuv
_set
CS=0V
VCC=3.7V
CS=0.1V
25C
25C
25C
25C
25C
25C
25C
30 to 70C
25C
30 to 70C
25C
30 to 70C
25C
30 to 70C
Discharge over-current
detection delay time 1
Toc1 VCC=3.7V
25C
30 to 70C
Discharge over-current
release delay time 1
Tocr1 VCC=3.7V
25C
30 to 70C
Discharge over-current
detection delay time 2 (Short
circuit)
Toc2 VCC=3.7V
25C
30 to 70C
Charge Over-current
detection delay time
Toch VCC=3.7V
25C
30 to 70C
Charge Over-current
release delay time
Tochr VCC=3.7V
25C
30 to 70C
MIN.
10.4
9.6
9.2
8.8
0.8
0.6
12.8
9.6
16
12
0.9
0.6
9.6
7.2
3.2
2.4
280
180
12.8
9.6
3.2
2.4
TYP.
13
12
11.6
11.2
300
15
1
1
16
16
20
20
1.1
1.1
12
12
4
4
400
400
16
16
4
4
MAX.
Unit
18.2
m
15.6
m
15
m
14
m
k
k
1.2
sec
1.5
19.2
ms
24
24
ms
30
1.3
ms
1.5
14.4
ms
18
4.8
ms
6
560
s
800
19.2
ms
24
4.8
ms
6
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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