MTM231232LBF 데이터 시트보기 (PDF) - Panasonic Corporation

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MTM231232LBF

Silicon P-channel MOSFET For Switching

Panasonic Corporation 

Doc No. TT4-EA-14177

Revision. 2

MTM231232LBF

Silicon P-channel MOSFET

For Switching

MTM76123 in SMini3 type package

 Features

 Low Drain-source On-state Resistance : RDS(on) typ. = 40 m  (VGS = -4 V)

 Low Drive Voltage : 2.5 V Drive

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)

 Marking Symbol :BL

 Packaging

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

 Absolute Maximum Ratings Ta = 25 C

Parameter

Symbol

Rating

Unit

Drain to Source Voltage

VDS

-20

V

Gate to Source Voltage

VGS

10

V

Drain Current

ID

-3

A

Drain Current (Pulsed) *1

Total Power Dissipation *2

IDp

-16

A

PD

500

mW

Channel Temperature

Tch

150

C

Storage Temperature Range

Tstg -55 to +150 C

Note *1 Pulse width  10 s, Duty cycle  1 %

*2 Measuring on ceramic board at 40 mm  38 mm  0.1 mm.

Absolute maximum rating PD Non-heat sink shall be made 150 mW.

Product Standards

MOS FET

MTM231232LBF

2.0

0.3

3

Unit : mm

0.15

1

2

0.9

(0.65)(0.65)

1.3

1. Gate

2. Source

3. Drain

Panasonic

JEITA

Code

SMini3-G1-B

SC-70

SOT-323

Internal Connection

Ｄ3

Ｇ1

Ｓ2

Pin Name

1. Gate

2. Source

3. Drain

Established : 2012-04-21

Revised : 2013-03-07

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