IPB06N03LA 데이터 시트보기 (PDF) - Infineon Technologies
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IPB06N03LA Datasheet PDF : 10 Pages
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Parameter
Symbol Conditions
IPB06N03LA
IPI06N03LA, IPP06N03LA
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=15 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=15 V, V GS=10 V,
-
t d(off)
I D=25 A, R G=2.7 Ω
-
tf
-
1995
848
124
11
25
30
7.0
2653 pF
1128
186
16 ns
38
45
10
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q gs
-
7
9 nC
Q g(th)
-
3.2
4.2
Q gd
V DD=15 V, I D=25 A,
-
Q sw
V GS=0 to 5 V
-
5
7
8
12
Qg
-
16
22
V plateau
-
3.3
-V
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
14
19 nC
Q oss
V DD=15 V, V GS=0 V
-
18
22
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
50 A
-
-
350
-
0.94
1.2 V
-
-
10 nC
5) See figure 16 for gate charge parameter definition
Rev. 1.3
page 3
2003-12-18
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