NX3008NBKW 데이터 시트보기 (PDF) - NXP Semiconductors.

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NX3008NBKW

30 V, 350 mA N-channel Trench MOSFET

NXP Semiconductors. 

NX3008NBKW

30 V, 350 mA N-channel Trench MOSFET

Rev. 1 — 2 August 2011

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 Very fast switching

 Low threshold voltage

 Trench MOSFET technology

 ESD protection up to 2 kV

 AEC-Q101 qualified

1.3 Applications

 Relay driver

 High-speed line driver

 Low-side loadswitch

 Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

VDS

drain-source voltage

VGS

gate-source voltage

ID

drain current

Static characteristics

RDSon

drain-source on-state

resistance

Conditions

Tj = 25 °C

VGS = 4.5 V; Tamb = 25 °C

VGS = 4.5 V; ID = 350 mA;

Tj = 25 °C

Min Typ Max Unit

-

-

30 V

-8 -

8V

[1] -

-

350 mA

-

1

1.4 Ω

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

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