NX3008NBKW 데이터 시트보기 (PDF) - NXP Semiconductors.

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NX3008NBKW

30 V, 350 mA N-channel Trench MOSFET

NXP Semiconductors. 

Nexperia

NX3008NBKW

30 V, 350 mA N-channel Trench MOSFET

120

Pder

(%)

80

001aao121

120

Ider

(%)

80

001aao122

40

40

0

-75

-25

25

75

125

175

Tj (°C)

0

-75

-25

25

75

125

175

Tj (°C)

Fig 1. Normalized total power dissipation as a

function of junction temperature

10

lD

(A)

1

Fig 2. Normalized continuous drain current as a

function of junction temperature

001aao246

(1)

10-1

(2)

Fig 3.

(3)

(4)

10-2

10-1

1

(5)

10

102

VDS (V)

IDM is a single pulse

(1) tp = 1 ms

(2) tp = 10 ms

(3) tp = 100 ms

(4) DC; Tsp = 25 °C

(5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad

Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

NX3008NBKW

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 2 August 2011

© Nexperia B.V. 2017. All rights reserved

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