NX3008NBKW 데이터 시트보기 (PDF) - NXP Semiconductors.
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NX3008NBKW Datasheet PDF : 16 Pages
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NX3008NBKW
30 V, 350 mA N-channel Trench MOSFET
0.4
ID
(A)
0.3
001aao271
(1) (2)
2.0
a
1.5
1.0
001aao272
0.2
0.5
0.1
0.0
0
1
2
3
VGS (V)
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.0
-60
0
60
120
180
Tj (˚C)
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
1.5
VGS(th)
(V)
1.0
0.5
001aao273
(1)
(2)
(3)
102
C
(pF)
10
001aao274
(1)
(2)
(3)
0.0
-60
0
60
120
180
Tj (˚C)
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
1
10-1
1
10
102
VDS (V)
f = 1 MHz; VGS = 0 V
(1)Ciss
(2)Coss
(3)Crss
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
NX3008NBKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 August 2011
© Nexperia B.V. 2017. All rights reserved
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