Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = −200 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
VDS = −10 V, ID = −1 mA
VGS = −10 V, ID = −2.5 A
VDS = −10 V, ID = −2.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
toff
Total gate charge (Gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs
VDD ≈ −160 V, VGS = −10 V, ID = −5 A
Gate−drain (“miller”) charge
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = −5 A, VGS = 0 V
IDR = −5 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SJ407
Min Typ. Max Unit
—
— ±10 µA
—
— −100 µA
−200 —
—
V
−1.5 — −3.5
V
—
0.8 1.0
Ω
2.0
4.0
—
S
— 800 —
—
80
—
pF
— 270 —
—
15
—
—
30
—
ns
—
6
—
—
65
—
—
20
—
—
13
—
nC
—
7
—
Min Typ. Max Unit
—
—
−5
A
—
— −20
A
—
—
2.0
V
— 210 —
ns
—
1.2
—
µC
J407
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-06