PS30H100(2012) 데이터 시트보기 (PDF) - STMicroelectronics

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PS30H100
(Rev.:2012)

Power Schottky rectifier

STMicroelectronics 

STPS30H100DJF

Characteristics

Figure 1. Average forward power dissipation Figure 2. Average forward current versus

versus average forward current

ambient temperature (δ = 0.5)

PF(AV)(W)

30

25

20

15

10

5

0

0

5

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ=1

T

IF(AV)(A)

δ =Tp/T

tp

10

15

20

25

30

35

IF(AV)(A)

35

30

25

20

15

10

T

5

δ=tp/T

tp

0

0

25

50

Rth(j -a)=Rth(j-c)

Tamb(°C)

75

100

125

150

Figure 3.

Relative variation of thermal

Figure 4.

impedance junction to case versus

pulse duration

Reverse leakage current versus

reverse voltage applied

(typical values)

1.0

Zth(j-c)/Rth(j-c)

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Single pulse

0.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

tp(s)

1.E+00

IR(mA)

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

1.E-04

0

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

10 20 30 40 50 60 70 80 90 100

Figure 5.

Junction capacitance versus

reverse voltage applied

(typical values)

C(pF)

10000

F=1MHz

Vosc =30mVRMS

Tj=25°C

1000

100

1

VR(V)

10

100

Figure 6. Forward voltage drop versus

forward current

IFM(A)

60

55

50

45

Tj=125°C

(Maximum values)

40

35

30

Tj=125°C

(Typical values)

25

Tj=25°C

(Maximum values)

20

15

10

5

0

VFM(V)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

Doc ID 023024 Rev 1

3/8

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