STW13NK80Z 데이터 시트보기 (PDF) - STMicroelectronics
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STW13NK80Z
STMicroelectronics
STW13NK80Z Datasheet PDF : 14 Pages
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STW13NK80Z
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
ID = 1mA, VGS =0
800
VDS = max rating
VDS = max rating,
TC = 125°C
VGS = ± 20V
VDS = VGS, ID = 100µA
3
VGS = 10V, ID = 6A
Typ. Max. Unit
V
1
µA
50
µA
±10 µA
3.75 4.5
V
0.53 0.65
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS = 15V, ID = 6A
11
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
3480
pF
312
pF
67
pF
Coss
(2)
eq
Equivalent output
capacitance
VGS = 0V, VDS = 0V
to 720V
150
pF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400V, ID = 6A
RG = 4.7Ω VGS = 10V
(see Figure 13)
VDD = 640V, ID = 12A,
VGS = 10V, RG = 4.7Ω
(see Figure 14)
33
ns
22
ns
95
ns
55
ns
115 155 nC
31
nC
51
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
5/14
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