BUK9529-100B 데이터 시트보기 (PDF) - NXP Semiconductors.

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BUK9529-100B

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

BUK9529-100B

N-channel TrenchMOS logic level FET

Rev. 02 — 9 February 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 AEC Q101 compliant

 Low conduction losses due to low

on-state resistance

 Suitable for logic level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V, 24 V and 42 V loads

 Automotive systems

 General purpose power switching

 Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

VDS

drain-source

Tj ≥ 25 °C; Tj ≤ 175 °C

voltage

ID

drain current

VGS = 5 V; Tmb = 25 °C;

see Figure 1; see Figure 3

Ptot

total power

Tmb = 25 °C; see Figure 2

dissipation

Static characteristics

RDSon

drain-source

on-state

resistance

VGS = 10 V; ID = 25 A;

Tj = 25 °C

VGS = 5 V; ID = 25 A;

Tj = 25 °C; see Figure 11;

see Figure 12

Min Typ Max Unit

-

-

100 V

-

-

46 A

-

-

157 W

-

22 27 mΩ

-

24 29 mΩ

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