BUK9529-100B 데이터 시트보기 (PDF) - NXP Semiconductors.

부품명

상세내역

제조사

BUK9529-100B

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

NXP Semiconductors

BUK9529-100B

N-channel TrenchMOS logic level FET

103

ID

(A)

Limit RDSon = VDS / ID

102

10

DC

1

1

10

03nm54

tp = 10 μ s

100 μ s

1 ms

10 ms

100 ms

102

103

VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

5. Thermal characteristics

Table 5.

Symbol

Rth(j-mb)

Rth(j-a)

Thermal characteristics

Parameter

thermal resistance from

junction to mounting base

thermal resistance from

junction to ambient

Conditions

see Figure 4

vertical in still air

Min Typ Max Unit

-

-

0.95 K/W

-

60

-

K/W

1

Zth(j-mb)

(K/W)

δ = 0.5

0.2

10−1

0.1

0.05

0.02

10−2

single shot

03nm55

P

tp

δ=

T

10−3

10−6

10−5

10−4

10−3

10−2

tp

t

T

10−1

1

tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

BUK9529-100B

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 — 9 February 2011

© NXP B.V. 2011. All rights reserved.

4 of 13

Share Link: