BUK9529-100B 데이터 시트보기 (PDF) - NXP Semiconductors.
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BUK9529-100B Datasheet PDF : 14 Pages
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NXP Semiconductors
BUK9529-100B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 15 V; VDS = 0 V; Tj = 25 °C
VGS = -15 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 175 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
ID = 25 A; VDS = 80 V; VGS = 5 V;
Tj = 25 °C; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
from contact screw on mounting base to
centre of die; Tj = 25 °C
from drain lead 6 mm from package to
centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
Min Typ Max Unit
100 -
-
V
89 -
-
V
1.1 1.5 2
V
-
-
2.3 V
0.5 -
-
V
-
-
500 µA
-
0.02 1
µA
-
2
100 nA
-
2
100 nA
-
-
32
mΩ
-
-
75
mΩ
-
22
27
mΩ
-
24
29
mΩ
-
33
-
nC
-
7
-
nC
-
13 -
nC
-
3270 4360 pF
-
236 283 pF
-
103 141 pF
-
30
-
ns
-
86 -
ns
-
96
-
ns
-
46 -
ns
-
3.5 -
nH
-
4.5 -
nH
-
7.5 -
nH
BUK9529-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 9 February 2011
© NXP B.V. 2011. All rights reserved.
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