BUK9529-100B 데이터 시트보기 (PDF) - NXP Semiconductors.
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BUK9529-100B Datasheet PDF : 14 Pages
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NXP Semiconductors
BUK9529-100B
N-channel TrenchMOS logic level FET
100
ID
(A)
75
03nm49
50
25
Tj = 175 °C
Tj = 25 °C
0
0
1
2
3
4
5
VGS (V)
2.5
VGS(th)
(V)
2.0
1.5
1.0
0.5
0
−60
0
max
typ
min
03ng52
60
120
180
Tj (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
60
03nm52
2.8
RDSon
a
(mΩ)
3 3.2 3.4 3.6 3.8 4
5
50
2.1
03ng41
40
10
30
Label is VGS (V)
20
0
40
80
120
ID (A)
1.4
0.7
0
-60
0
60
120
180
Tj (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of gate-source voltage; typical values
factor as a function of junction temperature
BUK9529-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 9 February 2011
© NXP B.V. 2011. All rights reserved.
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