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BUK9529-100B 데이터 시트보기 (PDF) - NXP Semiconductors.

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BUK9529-100B
NXP
NXP Semiconductors. NXP
BUK9529-100B Datasheet PDF : 14 Pages
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NXP Semiconductors
BUK9529-100B
N-channel TrenchMOS logic level FET
5
VGS
(V)
4
3
2
1
0
0
03nm47
VDD = 14 V
VDD = 80 V
10
20
30
40
QG (nC)
6000
C
(pF)
Ciss
4000
03nm53
2000
Coss
Crss
0
102
101
1
10
102
VDS (V)
Fig 13. Gate-source threshold voltage as a function of
junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
100
ID
(A)
75
03nm46
50
25
0
0.0
Tj = 175 °C
0.5
Tj = 25 °C
1.0
1.5
VSD (V)
Fig 15. Source current as a function of source-drain voltage; typical values
BUK9529-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 9 February 2011
© NXP B.V. 2011. All rights reserved.
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