NLAS44599(2005) 데이터 시트보기 (PDF) - ON Semiconductor

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NLAS44599
(Rev.:2005)

Low Voltage Single Supply Dual DPDT Analog Switch

ON Semiconductor 

NLAS44599

DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)

Symbol

Parameter

Condition

VCC

VIH

Minimum High−Level Input

2.0

Voltage, Select Inputs

2.5

3.0

4.5

5.5

VIL

Maximum Low−Level Input

2.0

Voltage, Select Inputs

2.5

3.0

4.5

5.5

IIN

Maximum Input Leakage

VIN = 5.5 V or GND

5.5

Current

IOFF

Power Off Leakage Current, VIN = 5.5 V or GND

0

Select Inputs

ICC

Maximum Quiescent Supply

Select and VIS = VCC or GND

5.5

Current

Guaranteed Limit

*555C to 255C t855C t1255C Unit

1.5

1.5

1.5

V

1.9

1.9

1.9

2.1

2.1

2.1

3.15

3.15

3.15

3.85

3.85

3.85

0.5

0.5

0.5

V

0.6

0.6

0.6

0.9

0.9

0.9

1.35

1.35

1.35

1.65

1.65

1.65

$0.2

$2.0 $2.0 mA

$10

$10 $10 mA

4.0

4.0

8.0

mA

DC ELECTRICAL CHARACTERISTICS − Analog Section

Guaranteed Limit

Symbol

RON

Parameter

Maximum “ON” Resistance

(Figures 17 − 23)

Condition

VIN = VIL or VIH

VIS = GND to VCC

IINI v 10.0 mA

VCC *555C to 255C t855C t1255C Unit

2.5

85

95

105

W

3.0

45

50

55

4.5

30

35

40

5.5

25

30

35

RFLAT (ON) ON Resistance Flatness

(Figures 17 − 23)

VIN = VIL or VIH

IINI v 10.0 mA

VIS = 1 V, 2 V, 3.5 V

4.5

4

INC(OFF)

INO(OFF)

NO or NC Off Leakage

Current (Figure 9)

VIN = VIL or VIH

VNO or VNC = 1.0 VCOM 4.5 V

5.5

1

ICOM(ON) COM ON Leakage Current

VIN = VIL or VIH

5.5

1

(Figure 9)

VNO 1.0 V or 4.5 V with VNC floating or

VNO 1.0 V or 4.5 V with VNO floating

VCOM = 1.0 V or 4.5 V

4

5

W

10

100 nA

10

100 nA

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