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GS72108AJ-7 데이터 시트보기 (PDF) - Giga Semiconductor
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GS72108AJ-7
256K x 8 2Mb Asynchronous SRAM
Giga Semiconductor
GS72108AJ-7 Datasheet PDF : 12 Pages
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Next
Last
Truth Table
CE
OE
WE
H
X
X
L
L
H
L
X
L
L
H
H
Note:
X: “H” or “L”
DQ
1
to DQ
8
Not Selected
Read
Write
High Z
GS72108ATP/J
V
DD
Current
ISB
1
, ISB
2
I
DD
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
Input Voltage
V
DD
–
0.5 to +4.6
V
V
IN
–
0.5 to V
DD
+0.5
V
(
≤
4.6 V max.)
Output Voltage
V
OUT
–
0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
–
55 to 150
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.05 10/2004
3/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
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