NTMFS4927NT1G 데이터 시트보기 (PDF) - ON Semiconductor
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NTMFS4927NT1G Datasheet PDF : 8 Pages
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NTMFS4927N, NTMFS4927NC
TYPICAL CHARACTERISTICS
1200
1000
800
600
400
200
0
0
TJ = 25°C
Ciss
VGS = 0 V
Coss
Crss
5
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
100
VGS = 10 V
VDD = 15 V
ID = 15 A
10
td(off)
tf
tr
td(on)
1
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10 ms
10
100 ms
1
0 V < VGS < 10 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
0.01 Package Limit
0.01
0.1
1
1 ms
10 ms
dc
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
11
QT
10
9
8
7
6
5
4 Qgs
Qgd
TJ = 25°C
3
2
VGS = 10 V
1
0
VDD = 15 V
ID = 30 A
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
25
20
15
10
TJ = 125°C
TJ = 25°C
5
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
20
18
ID = 20 A
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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